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| September 1997 NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features -24 A, -20 V. RDS(ON) = 0.05 @ VGS= -4.5 V. RDS(ON) = 0.07 @ VGS= -2.7 V. RDS(ON) = 0.075 @ VGS= -2.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ S G D Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage T C = 25C unless otherwise noted NDP6020P -20 8 -24 -70 60 0.4 -65 to 175 NDB6020P Units V V A Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed PD Total Power Dissipation @ TC = 25C Derate above 25C W W/C C TJ,TSTG Operating and Storage Temperature Range (c) 1997 Fairchild Semiconductor Corporation NDP6020P Rev.C1 Electrical Characteristics (TC = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) RDS(ON) RDS(ON) ID(on) gFS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 A VDS = -16 V, VGS = 0 V TJ = 55C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V VDS = VGS, ID = -250 A TJ = 125C Static Drain-Source On-Resistance VGS = -4.5 V, ID = -12 A TJ = 125C Static Drain-Source On-Resistance Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VGS = -2.7 V, ID = -10 A VGS = -2.5 V, ID = -10 A VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -12 A VDS = -10 V, VGS = 0 V, f = 1.0 MHz -24 14 -0.4 -0.3 -0.7 -0.56 0.041 0.06 0.059 0.064 -20 -1 -10 100 -100 V A A nA nA ON CHARACTERISTICS (Note 1) Gate Threshold Voltage -1 -0.7 0.05 0.08 0.07 0.075 A S V DYNAMIC CHARACTERISTICS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance 1590 725 215 pF pF pF SWITCHING CHARACTERISTICS (Note 1) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -10 V, ID = -24 A, VGS = -5 V VDD = -20 V, ID = -3 A, VGS = -5 V, RGEN = 6 15 27 120 70 25 5 10 30 60 250 150 35 nS nS nS nS nC nC nC NDP6020P Rev.C1 Electrical Characteristics (TC = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS IS ISM VSD trr Irr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IS = -12 A (Note 1) VGS = 0 V, IF = -24 A, dIF/dt = 100 A/s -1.1 60 -1.7 -24 -80 -1.3 A A V ns A THERMAL CHARACTERISTICS RJC RJA Note: 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.5 62.5 C/W C/W NDP6020P Rev.C1 Typical Electrical Characteristics -50 V GS = -5.0V , DRAIN-SOURCE CURRENT (A) -40 1.8 -4.5 -4.0 R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = -2.5 V -3.5 1.6 -2.7 -3.0 -30 -3.0 -20 1.4 -3.5 -4.0 -2.7 -2.5 1.2 -4.5 -5.0 -10 I D -2.0 1 0 0 -1 V DS -2 -3 -4 , DRAIN-SOURCE VOLTAGE (V) -5 0.8 0 -10 -20 -30 I D , DRAIN CURRENT (A) -40 -50 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 1.8 2 I D = -12A V G S =-4.5V DRAIN-SOURCE ON-RESISTANCE 1.6 DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V TJ = 125C 1.5 R DS(ON), NORMALIZED 1.4 1.2 R DS(on) , NORMALIZED 25C 1 1 0.8 -55C 0.6 -50 0.5 -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (C) J 150 175 0 -10 I D -20 -30 -40 -50 , DRAIN CURRENT (A) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. -10 GATE-SOURCE THRESHOLD VOLTAGE 1.2 V DS = -5V -8 I , DRAIN CURRENT (A) T = -55C J 25C 125C V GS(th), NORMALIZED 1.1 1 0.9 0.8 0.7 0.6 0.5 -50 VDS = V GS I D = -250A -6 -4 D -2 0 -0.5 -1 V GS -1.5 -2 -2.5 -25 0 , GATE TO SOURCE VOLTAGE (V) 25 50 75 100 125 T , JUNCTION TEMPERATURE (C) J 150 175 Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. NDP6020P Rev.C1 Typical Electrical Characteristics (continued) 1.08 DRAIN-SOURCE BREAKDOWN VOLTAGE ID = -250A -I , REVERSE DRAIN CURRENT (A) 1.06 20 10 4 1 VGS = 0V T J = 125C 25C BV DSS , NORMALIZED 1.04 0 .1 1.02 -55C 1 0 .0 1 0.98 0 .0 0 1 0.96 -50 S -25 0 25 50 75 100 125 150 175 0 .0 0 0 1 0 0 .2 0 .4 0.6 0 .8 1 -V SD , BODY DIODE FORWARD VOLTAGE (V) 1 .2 T J , JUNCTION TEMPERATURE (C) Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 4000 3000 2000 CAPACITANCE (pF) , GATE-SOURCE VOLTAGE (V) 8 I Ciss 6 D = -24A V DS = -5V -10V -15V 1000 Coss 500 300 200 4 V GS = 0 V 100 0 .1 0 .2 -V DS 0 .5 1 2 5 , DRAIN TO SOURCE VOLTAGE (V) 10 20 -V 0 0 10 Q g GS f = 1 MHz Crss 2 20 , GATE CHARGE (nC) 30 40 Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. -VDD t d(on) t on tr 90% t off t d(off) 90% tf V IN D RL V OUT DUT VO U T VGS 10% 10% 90% R GEN G V IN S 10% 50% 50% PULSE WIDTH INVERTED Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDP6020P Rev.C1 Typical Electrical Characteristics (continued) g FS, TRANSCONDUCTANCE (SIEMENS) 30 100 V DS = - 5V TJ = -55C 25C 125C -ID , DRAIN CURRENT (A) 24 60 30 T IMI )L (ON DS R 1s 1m 10m s 18 s 10 5 3 2 100 12 DC VGS = -4.5V SINGLE PULSE R JC = 2.5 C/W AT = 25C C 1 2 5 10 ms 6 0 0 -5 -10 -15 -20 -25 I D , DRAIN CURRENT (A) 1 20 30 - VDS , DRAIN-SOURCE VOLTAGE (V) Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. Maximum Safe Operating Area. 1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0.2 D = 0.5 r(t), NORMALIZED EFFECTIVE 0.2 0.1 R JC (t) = r(t) * R JC R JC = 2.5 C/W 0.1 0.05 P(pk) 0.05 0.03 0.02 0.02 0.01 Single Pulse t1 t2 TJ - TC = P * R (t) JC Duty Cycle, D = t 1 /t 2 0.1 1 t 1 ,TIME (m s) 10 100 1000 0.01 0.01 Figure 15. Transient Thermal Response Curve. NDP6020P Rev.C1 |
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